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| ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Ts Value 600 400 9 1.5 1.5 150 -55 to +150 Unit V V V A W O C C O Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 100 mA Collector Base Breakdown Voltage at IC = 1 mA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 1 mA Collector Cutoff Current at VCB = 600 V Emitter Cutoff Current at VEB = 9 V Collector Emitter Saturation Voltage at IC = 1 A, IB = 250 mA Base Emitter Saturation Voltage at IC = 1 A, IB = 250 mA Symbol hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) Min. 10 600 400 9 Max. 70 100 100 1 1.2 Unit V V V nA A V V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 22/03/2006 ST 13003 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 22/03/2006 |
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